 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 * Ultra low loss thin IGBT die * Highly rugged SPT+ design * Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Limited by Tvjmax VGE = 0 V, Tvj 25 C min max 1200 100 200 Unit V A A V s C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMY 12K1201 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load, FWD: 5SLX 12H1200 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 100 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1200 typ max Unit V 1.8 2.0 100 400 -200 5 6.2 1050 7.43 0.52 0.34 2 125 135 60 60 420 490 60 75 8.6 200 7 V V A A nA V nC nF ns ns ns ns VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 4 mA, VCE = VGE, Tvj = 25 C IC = 100 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Turn-on switching energy Eon mJ 12.4 6.8 mJ 10.8 470 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1635-01 Sep 06 page 2 of 5 5SMY 12K1201 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 11.9 x 11.2 10.4 x 9.7 1.2 x 1.22 130 20 AlSi1 Al / Ti / Ni / Ag 4 1.2 mm mm mm m m m LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 1.31 1.20 0.05 G 11.19 0.05 1.22 0.05 1.32 10.06 9.67 Emitter 10.37 10.77 11.89 0.05 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1635-01 Sep 06 page 3 of 5 5SMY 12K1201 300 200 VCE = 20 V 180 250 25 C 200 160 140 125 C 120 IC [A] IC [A] 150 100 80 100 60 40 20 VGE = 15 V 125 C 25 C 50 0 0 1 2 VCE [V] 3 4 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 100 90 80 70 Eon, Eoff [mJ] 60 50 40 30 20 Eoff 10 Esw [mJ] = 1.23 x 10 x I C + 2.33 x 10 x IC + 7.29 -3 2 -2 45 VCC = 600 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 60 nH Eon, Eoff [mJ] 40 35 30 25 20 15 Eoff 10 5 0 0 50 100 150 IC [A] 200 250 300 0 10 20 30 40 50 60 70 RG [ohm] VCC = 600 V IC = 100 A VGE = 15 V Tvj = 125 C L = 60 nH Eon Eon 0 Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1635-01 Sep 06 page 4 of 5 5SMY 12K1201 20 10 Cies VCC = 600 V 15 VCC = 800 V VGE [V] VGE = 0 V fOSC = 1 MHz VOSC = 50 mV C [nF] 1 Coes 10 Cres 5 IC = 100 A Tvj = 25 C 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Qg [C] 0.9 1.0 0.1 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1635-01 Sep 06 |
Price & Availability of 5SMY12K1201
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |